- 您現在的位置：買賣IC網 > PDF目錄375772 > FDD6632 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз PDF資料下載
參數資料
| 型號： | FDD6632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз |
| 中文描述： | 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 3/11頁 |
| 文件大小： | 241K |
| 代理商： | FDD6632 |
2002 Fairchild Semiconductor Corporation
FDD6632
Rev. B
F
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
2
4
6
8
10
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.2
0.1
0.05
0.02
0.01
0.5
SINGLE PULSE
10
100
7
I
D
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 5V
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
C
= 25
o
C
相關PDF資料 |
PDF描述 |
|---|---|
| FDD6635 | 35V N-Channel PowerTrench MOSFET |
| FDD6637_06 | 35V P-Channel PowerTrench MOSFET |
| FDD6637 | 35V P-Channel PowerTrench-R MOSFET |
| FDD6670S | 20 AMP MINIATURE POWER RELAY |
| FDD6670 | N-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6632_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз |
| FDD6635 | 功能描述:MOSFET 35V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 功能描述:MOSFET 35V PCH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252 |
| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
發布緊急采購，3分鐘左右您將得到回復。