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參數(shù)資料
| 型號(hào)： | FDD8451 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 40V, 28A, 24mOHM |
| 中文描述： | 9 A, 40 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 349K |
| 代理商： | FDD8451 |
tm
April 2006
F
2006 Fairchild Semiconductor Corporation
FDD8451 Rev. B
www.fairchildsemi.com
1
FDD8451
N-Channel PowerTrench
MOSFET
40V, 28A, 24m
Features
Max r
DS(on)
=
24m
at V
GS
= 10V, I
D
= 9A
Max r
DS(on)
=
30m
at V
GS
= 4.5V, I
D
= 7A
Low gate charge
Fast Switching
High performance trench technology for extremely low
r
DS(on)
RoHS compliant
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low r
DS(on)
.
Application
DC/DC converter
Backlight inverter
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
40
±20
28
9
78
20
37
-55 to 150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
@T
C
=25°C
-Continuous @T
A
=25°C
-Pulsed (Note 1)
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Operating and Storage Temperature
I
D
A
E
AS
P
D
T
J
, T
STG
mJ
W
°
C
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
4.1
°C/W
Thermal Resistance, Junction to Ambient
40
°C/W
Thermal Resistance, Junction to Ambient
96
°C/W
Device Marking
FDD8451
Device
FDD8451
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
D
G
S
L
E
A
D
F
R
E
E
M
T
A
L
T
I
O
N
MP
I
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