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參數資料
| 型號： | FDFS2P753AZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| 中文描述： | 3 A, 30 V, 0.115 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 243K |
| 代理商： | FDFS2P753AZ |
F
www.fairchildsemi.com
2
2007 Fairchild Semiconductor Corporation
FDFS2P753AZ Rev.B
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= -250
μ
A, V
GS
= 0V
-30
V
I
D
= -250
μ
A, referenced to 25°C
-21
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24V,
V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
-1
μ
A
T
J
= 125°C
-100
±10
I
GSS
Gate to Source Leakage Current
μ
A
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= -250
μ
A
-1.0
-2.1
-3.0
V
I
D
= -250
μ
A, referenced to 25°C
5
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= -10V, I
D
= -3.0A
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -10V, I
D
= -3.0A, T
J
= 125°C
V
DD
= -5V, I
D
= -3.0A
69
115
97
6
115
180
162
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
330
60
55
18
455
110
100
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Gate to Source Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= -15V, I
D
= -3.0A,
V
GS
= -10V, R
GEN
= 6
6
4
12
10
34
27
11.0
5.7
ns
ns
ns
ns
nC
nC
nC
nC
19
15
7.9
4.1
1.3
2.0
V
GS
= 0V to -10V
V
GS
= 0V to -4.5V
V
DD
= -15V,
I
D
= -3.0A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
V
GS
= 0V, I
S
= -2.0A (Note 3)
-0.9
20
14
-1.2
30
21
V
ns
nC
I
F
= -3.0A, di/dt = 100A/
μ
s
Schottky Diode Characteristics
V
R
Reverse Breakdown Voltage
I
R
= 1mA
30
V
μ
A
mA
I
R
Reverse Leakage
V
R
= 10V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
39
18
225
140
364
290
250
V
F
Forward Voltage
I
F
= 100mA
280
mV
I
F
= 2A
450
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相關代理商/技術參數 |
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|---|---|
| FDFS2P753AZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| FDFS2P753Z | 功能描述:MOSFET -30V -3A 115 OHM PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303 | 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET with Schottky Diode |
| FDFS6N548 | 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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