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參數資料
| 型號： | FDFS2P753AZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| 中文描述： | 3 A, 30 V, 0.115 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 6/7頁 |
| 文件大小： | 243K |
| 代理商： | FDFS2P753AZ |
F
www.fairchildsemi.com
6
2007 Fairchild Semiconductor Corporation
FDFS2P753AZ Rev.B
Figure 13.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
100
T
J
= 25
o
C
T
J
= 125
o
C
I
F
F
V
F,
FORWARD VOLTAGE(V)
Schottky Diode Forward Voltage
Figure 14.
Schottky Diode Reverse Current
0
5
10
15
20
25
30
0.01
0.1
1
10
100
T
J
= 25
o
C
T
J
= 125
o
C
I
R
R
V
R
, REVERSE VOLTAGE (V)
Figure 15.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
P
(
,
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
t, PULSE WIDTH (s)
50
0.5
Single Pulse Maximum Power Dissipation
Figure 16. Transient Thermal Response Curve
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
SINGLE PULSE
R
θ
JA
= 135
o
C/W
DUTY CYCLE-DESCENDING ORDER
N
I
Z
θ
J
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFS2P753AZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| FDFS2P753Z | 功能描述:MOSFET -30V -3A 115 OHM PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303 | 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET with Schottky Diode |
| FDFS6N548 | 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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