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參數(shù)資料
| 型號： | FDFS2P753AZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| 中文描述： | 3 A, 30 V, 0.115 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 243K |
| 代理商： | FDFS2P753AZ |
F
www.fairchildsemi.com
5
2007 Fairchild Semiconductor Corporation
FDFS2P753AZ Rev.B
Figure 7.
0
2
4
6
8
10
0
2
4
6
8
10
I
D
= -3A
V
DD
= -15V
V
DD
= -10V
-
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= -20V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
30
f = 1MHz
V
GS
= 0V
C
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
1
2
3
4
5
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
-
A
,
2
Unclamped Inductive
Switching Capability
Figure 10.
0
5
10
15
20
25
30
10
-8
10
-7
10
-6
10
-5
10
-4
V
GS
= 0V
T
J
= 25
o
C
T
J
= 125
o
C
-V
GS,
GATE TO SOURCE VOLTAGE(V)
-
g
G
Gate Leakage Current vs Gate to
Source Volatge
Figure 11.
Current vs Ambient Temperature
25
50
75
100
125
o
C
)
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
R
θ
JA
= 78
o
C/W
V
GS
= -10V
V
GS
= -4.5V
-
D
,
D
T
A
,
AMBIENT TEMPERATURE
(
Maximum Continuous Drain
Figure 12.
0.1
1
10
0.01
0.1
1
10
DC
10s
1s
100ms
10ms
1ms
D
,
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
20
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
80
Forward Bias Safe
Operating Area
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFS2P753AZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| FDFS2P753Z | 功能描述:MOSFET -30V -3A 115 OHM PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303 | 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET with Schottky Diode |
| FDFS6N548 | 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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