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參數資料
| 型號： | FDR4410 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 9300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 220K |
| 代理商： | FDR4410 |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
35
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
T
J
= 55°C
25
μA
I
GSS
I
GSS
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage Current
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.5
2
V
Gate Threshold Voltage Temp.Coefficient
-4.4
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 9.3 A
0.011
0.013
T
J
=125°C
0.017
0.02
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 9.3 A
0.016
0.02
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
20
A
Forward Transconductance
25
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1170
pF
Output Capacitance
627
pF
Reverse Transfer Capacitance
180
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 25 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
12
22
ns
Turn - On Rise Time
11
20
ns
Turn - Off Delay Time
41
66
ns
Turn - Off Fall Time
34
55
ns
Total Gate Charge
V
DS
= 15 V, I
D
= 9.3 A,
V
GS
= 10 V
36
50
nC
Gate-Source Charge
4.5
nC
Gate-Drain Charge
10
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
1.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.5 A
(Note 2)
0.72
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design. R
θ
JA
shown below for single device operation on FR-4 board in still air.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDR4410 Rev.C
b. 125
O
C/W on a 0.026 in
2
of pad
of 2oz copper.
a. 70
O
C/W on a 1 in
2
pad of 2oz
copper.
c. 135
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
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相關代理商/技術參數 |
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| FDR4420A | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR4420A_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDR4420A_Q | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR-50 | 制造商:Takachi Electric Industrial 功能描述:DIN[ {bNXF100mm 50mm 35mm Bulk |
| FDR5002 | 制造商:FCI 制造商全稱:First Components International 功能描述:50.0 Amp DISH AUTO DIODES Low forward voltage drop |
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