- 您現在的位置：買賣IC網 > PDF目錄375780 > FDR4410 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數資料
| 型號： | FDR4410 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 9300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 220K |
| 代理商： | FDR4410 |
FDR4410 Rev.C
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
6.0
4.5
3.5
4.0
3.0
5.0
0
10
20
30
40
50
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
V = 3.5V
R
D
10
4.5
5.0
4.0
6.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V =10V
I =9.3A
Figure 3. On-Resistance Variation
with Temperature
.
1
1.5
2
2.5
3
3.5
4
4.5
5
0
10
20
30
40
50
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 10V
J
125°C
25°C
Figure 5. Transfer Characteristics.
0
0.3
0.6
0.9
1.2
1.5
0.0001
0.001
0.01
0.1
1
10
50
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
TJ
25°C
-55°C
V = 0V
2
4
6
8
10
0
0.01
0.02
0.03
0.04
0.05
0.06
V , GATE TO SOURCE VOLTAGE (V)
I = 5A
R
D
A
A
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
相關PDF資料 |
PDF描述 |
|---|---|
| FDR4420A | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDR6580 | N-Chennal 2.5V Specified PowerTrench⑩ MOSFET |
| FDR6674A | 30V N-Channel PowerTrench MOSFET |
| FDR6674A | Thermoelectric Cooler Controller |
| FDR6678A | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR4420A | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR4420A_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDR4420A_Q | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR-50 | 制造商:Takachi Electric Industrial 功能描述:DIN[ {bNXF100mm 50mm 35mm Bulk |
| FDR5002 | 制造商:FCI 制造商全稱:First Components International 功能描述:50.0 Amp DISH AUTO DIODES Low forward voltage drop |
發布緊急采購，3分鐘左右您將得到回復。