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參數(shù)資料
型號(hào): FDR4410
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: 9300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁數(shù): 4/4頁
文件大小: 220K
代理商: FDR4410
FDR4410 Rev.C
Typical Electrical Characteristics
(continued)
Figure 9. Maximum Safe Operating Area.
0
10
20
30
40
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
V =10V
G
20V
I = 9.3A
15V
Figure 7. Gate Charge Characteristics
.
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
3
5
10
30
50
0.01
0.03
0.1
0.5
1
5
20
80
I
D
RDS(ON) LIMIT
DC
1s
100ms
101ms
V = 10V
SINGLE PULSE
R = See Note 1c
T = 25°C
JA
100μs
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R JA
P(pk)
t
1
t
2
r
Figure 11. Transient Thermal Response Curve
.
Thermal characterization performed using the conditions described in note 1c.
Transient thermalresponse will change depending on the circuit board design.
0.1
0.2
0.5
1
2
5
10
20
30
100
200
300
500
1000
2000
3000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics.
0
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R =See Note 1c
T = 25°C
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