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參數資料
| 型號： | FDR8305N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 4500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 215K |
| 代理商： | FDR8305N |
F
FD8305N Rev. C
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0.8
1
1.2
1.4
1.6
1.8
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 2.0V
2.5V
4.0V
3.5V
4.5V
3.0V
0
0.01
0.02
0.03
0.04
0.05
0.06
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 2.3A
T
A
= 125
o
C
T
A
= 25
o
C
0
4
8
12
16
20
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 4.5A
V
GS
= 4.5V
0
4
8
12
16
20
0
0.4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.8
1.2
1.6
2
I
D
,
V
GS
= 4.5V
3.0V
2.5V
2.0V
1.5V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR8308P | 功能描述:MOSFET SSOT-8 P-CH DUAL -20 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| FDR8309P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8321L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel MOSFET With Gate Driver For Load Switch Application |
| FDR836P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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