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參數(shù)資料
| 型號(hào)： | FDR8508P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel, Logic Level, PowerTrench⑩ MOSFET |
| 中文描述： | 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 274K |
| 代理商： | FDR8508P |
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current
I
GSSR
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-30
V
Breakdown Voltage Temperature
24
mV/
°
C
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-1
-1.8
-4
-3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -10 V, I
D
= -3 A
V
GS
= -10 V, I
D
= -3 A, T
J
= 125
°
C
V
GS
= -4.5 V, I
D
= -2.3 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -3 A
0.040
0.057
0.058
0.052
0.078
0.086
A
mS
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-20
9
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
750
220
100
pF
pF
pF
V
DS
= -15 V, V
GS
= 0 V, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
12
14
24
16
8
1.8
3
22
25
38
27
12
ns
ns
ns
ns
nC
nC
nC
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
V
DS
= -15 V, I
D
= -3A,
V
GS
= -5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
-0.67
-1.2
A
V
V
GS
= 0 V, I
S
= -0.67 A
(Note 2)
-0.75
θ
θ
θ
θ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDR8508P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| FDR8508PQ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDR8521L | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8521L_Q | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR856P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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