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參數資料
| 型號： | FDS5682_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 7.5 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數： | 3/12頁 |
| 文件大小： | 388K |
| 代理商： | FDS5682_NL |
F
FDS5682 Rev. A
www.fairchildsemi.com
3
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
V
DD
= 30V, I
D
= 7.5A
V
GS
= 10V, R
GS
= 11
-
-
-
-
-
-
-
9
33
-
-
-
-
126
ns
ns
ns
ns
ns
ns
13
67
17
-
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
I
SD
= 7.5A
I
SD
= 2.1A
I
SD
= 7.5A, dI
SD
/dt=100A/
μ
s
I
SD
= 7.5A, dI
SD
/dt=100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
33
29
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1:
Starting T
= 25°C, L = 1mH, I
= 13.7A, V
= 60V, V
= 10V.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
3:
R
θ
JA
is measured with 1.0 in
copper on FR-4 board.
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