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參數資料
| 型號： | FDS5682_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 7.5 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 388K |
| 代理商： | FDS5682_NL |
F
FDS5682 Rev. A
www.fairchildsemi.com
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5.
Unclamped Inductive Switching
Capability
1
10
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
50
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
Figure 6.
0
5
10
15
20
25
1.5
2.0
2.5
3.0
3.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
Transfer Characteristics
Figure 7. Saturation Characteristics
0
5
10
15
20
25
0
0.2
0.4
0.6
0.8
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 2.5V
V
GS
= 10V
T
A
= 25
o
C
V
GS
= 3V
V
GS
= 5V
Figure 8.
0
20
40
60
80
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 7.5A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 1A
Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 9.
Resistance vs Junction Temperature
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 7.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source On
Figure 10.
0.50
0.75
1.00
1.25
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics
T
A
= 25°C unless otherwise noted
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