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參數(shù)資料
| 型號： | FGA15N120AND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 24 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3PN, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 574K |
| 代理商： | FGA15N120AND |
FGA15N120AND Rev. A
F
2003 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
°
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 3mA
1200
--
--
V
Temperature Coefficient of Breakdown
V
GE
= 0V, I
C
= 3mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
3
mA
nA
± 100
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 15mA, V
CE
= V
GE
I
C
= 15A
,
V
GE
= 15V
I
C
= 15A
,
V
GE
= 15V,
T
C
= 125
°
C
I
C
= 24A
,
V
GE
= 15V
3.5
--
5.5
2.4
7.5
3.2
V
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
--
2.9
--
V
--
3.0
--
V
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1150
120
56
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
Q
g
Total Gate Charge
Q
ge
Gate-Emitter Charge
Q
gc
Gate-Collector Charge
L
e
Internal Emitter Inductance
V
CC
= 600 V, I
C
= 15A,
R
G
= 20
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
90
70
310
60
3.27
0.6
3.68
80
60
310
50
3.41
0.84
4.25
120
9
63
14
--
--
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH
120
4.9
0.9
5.8
--
--
--
--
--
--
--
180
14
95
--
V
CC
= 600 V, I
C
= 15A,
R
G
= 20
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
V
CE
= 600 V, I
C
= 15A,
V
GE
= 15V
Measured 5mm from PKG
Symbol
Parameter
Test Conditions
Min.
--
--
--
--
--
--
--
--
Typ.
1.7
1.8
210
280
27
31
2835
4340
Max.
2.7
--
330
--
40
--
6600
--
Units
V
FM
Diode Forward Voltage
I
F
= 15A
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
V
t
rr
Diode Reverse Recovery Time
I
F
= 15A
dI/dt = 200 A/
μ
s
ns
I
rr
Diode Peak Reverse Recovery
Current
A
Q
rr
Diode Reverse Recovery Charge
nC
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| FGA15N120ANDTU | 功能描述:IGBT 晶體管 NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGA15N120ANTD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_1 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_F109 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
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