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參數資料
型號: FGA15N120AND
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: IGBT
中文描述: 24 A, 1200 V, N-CHANNEL IGBT
封裝: TO-3PN, 3 PIN
文件頁數: 4/8頁
文件大小: 574K
代理商: FGA15N120AND
FGA15N120AND Rev. A
F
2003 Fairchild Semiconductor Corporation
0
10
20
30
40
50
60
70
10
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25
T
C
= 125
td(on)
tr
S
Gate Resistance, R
G
[
]
1
10
0
500
1000
1500
2000
2500
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
Crss
C
Collector-Emitter Voltage, V
CE
[V]
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
0
10
20
30
40
50
60
70
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25
T
C
= 125
td(off)
tf
S
Gate Resistance, R
G
[
]
0
10
20
30
40
50
60
70
1
10
Common Emitter
V
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25
T
C
= 125
Eon
Eoff
S
Gate Resistance, R
G
[
]
5
10
15
20
25
30
100
Common Emitter
V
GE
=
±
15V, R
G
= 20
T
C
= 25
T
C
= 125
tr
td(on)
S
Collector Current, I
C
[A]
5
10
15
20
25
30
100
1000
Common Emitter
V
GE
=
±
15V, R
G
= 20
T
C
= 25
T
C
= 125
td(off)
tf
S
Collector Current, I
C
[A]
Fig 8. Turn-On Characteristics vs. Gate
Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
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相關代理商/技術參數
參數描述
FGA15N120ANDTU 功能描述:IGBT 晶體管 NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGA15N120ANTD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT
FGA15N120ANTD_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT
FGA15N120ANTD_1 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT
FGA15N120ANTD_F109 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT
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