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參數(shù)資料
| 型號(hào)： | FGA25N12ANTD |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 1200V NPT Trench IGBT |
| 中文描述： | 1200伏不擴(kuò)散核武器條約溝道IGBT |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 861K |
| 代理商： | FGA25N12ANTD |
6
www.fairchildsemi.com
FGA25N120ANTD Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
Figure 17. Transient Thermal Impedance of IGBT
10
20
30
40
50
0.1
1
10
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
°
C
T
C
= 125
°
C
Eon
Eoff
S
Collector Current, I
C
[A]
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
16
600V
400V
Common Emitter
R
L
= 24
T
C
= 25
°
C
Vcc = 200V
G
G
Gate Charge, Q
g
[nC]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 125
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
μ
s
100
μ
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse T
C
= 25
°
C
Curves must be derated
linearly with increase
in temperature
C
Collector - Emitter Voltage, V
CE
[V]
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
0.1
0.05
0.5
0.2
0.02
0.01
single pulse
T
a
e
R
ectangular Pulse D
uration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
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