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參數(shù)資料
| 型號(hào)： | FGK60N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | INDUSTRIAL POWER SUPPLY, 85-265VAC/120-330VDC INPUT, 24V@14A RoHS Compliant: Yes |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC, STRETCH TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大小： | 185K |
| 代理商： | FGK60N6S2D |
2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
(Continued)
I
C
,
0
25
50
3.5
4.5
5.0
5.5
8.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6.0
75
150
175
3.0
125
100
200
4.0
6.5
7.0
7.5
T
J
= -55
o
C
T
J
= 25
o
C
PULSE DURATION = 250μs
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
4
8
12
20
40
60
80
0
14
16
100
120
140
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1mA, R
L
= 7.5
I
CE
= 20A
0
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
125
25
150
5
E
T
,
4
I
CE
= 80A
I
CE
= 40A
1
R
G
= 3
, L = 100
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
1000
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 20A
I
CE
= 40A
I
CE
= 80A
T
J
= 125
o
C, L = 100
μ
H, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
20
40
0.01
0.1
10
1
C
OES
C
IES
60
80
100
FREQUENCY = 1MHz
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.6
9
1.8
8
10
11
12
16
2.0
2.2
V
C
,
I
CE
= 20A
2.4
7
13
14
15
2.6
2.8
DUTY CYCLE < 0.5%
PULSE DURATION = 250
μ
s
I
CE
= 40A
I
CE
= 60A
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