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參數資料
| 型號： | FZT849 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR |
| 中文描述： | 7 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 60K |
| 代理商： | FZT849 |
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
*
Extremely low equivalent on-resistance;
R
CE(sat)
36m
at 5A
*
7 Amp
continuous collector current (20 Amp peak)
*
Very low saturation voltages
*
Excellent gain charateristics specified upto 20 Amp
*
P
tot
=3 Watts
PARTMARKING DETAILS -
COMPLEMENTARY TYPE -
FZT849
FZT949
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
7
A
Power Dissipation at T
amb
=25°C
P
tot
3
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
FZT849
C
C
E
B
3 - 257
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| FZT849TA | 功能描述:兩極晶體管 - BJT NPN High Ct Low Sat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| FZT851 | 制造商:Zetex 功能描述:Bulk 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, 60V, 6A, 3W, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:130MHz; Power Dissipation Pd:3W; DC Collector Current:6A; DC Current Gain hFE:200; No. of Pins:4 ;RoHS Compliant: Yes |
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