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參數(shù)資料
型號: HY27SS16121M
廠商: Hynix Semiconductor Inc.
英文描述: 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述: 512兆(64Mx8bit / 32Mx16bit)NAND閃存
文件頁數(shù): 22/43頁
文件大?。?/td> 729K
代理商: HY27SS16121M
Rev 0.6 / Oct. 2004
22
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Sequential Row Read Disabled
If the device is delivered with Sequential row read disabled and Automatic Read Page 0 at Power-up, only the first
page (Page 0) will be automatically read after the power-on sequence. Refer to Figure 18.
Sequential Row Read Enabled
If the device is delivered with the Automatic Page 0 Read option only (Sequential Row Read Enabled), the device will
automatically enter Sequential Row Read mode after the power-up sequence, and start reading Page 0, Page 1, etc.,
until the last memory location is reached, each new page being accessed after a time t
BLBH1
.
The Sequential Row Read operation can be inhibited or interrupted by de-asserting E (set to V
IH
) or by issuing a com-
mand. Refer to Figure 19.
Note: (1). V
CCth
is equal to 2.5V for 3.3V Power Supply devices and to 1.5V for 1.8V Power Supply devices.
Data
N+1
Data
N
Last
Data
Data
N+2
tBLBH1
Busy
Vccth (1)
Vcc
ALE
CLE
I/O
RE
RB
CE
WE
Data Output
from Address N to Last Byte or Word in Page
Figure 18. Sequential Row Read Disabled and Automatic Page 0 Read at power-up
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