欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào)： HY27SS16121M
廠商： Hynix Semiconductor Inc.
英文描述： 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述： 512兆（64Mx8bit / 32Mx16bit）NAND閃存
文件頁(yè)數(shù)： 3/43頁(yè)
文件大小： 729K
代理商： HY27SS16121M
Rev 0.6 / Oct. 2004
3
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
DESCRIPTION
The HYNIX HY27(U/S)SXX121M series is a family of non-volatile Flash memories that use NAND cell technology. The
devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words
(256 + 8 spare) depending on whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x8 or x16 Input/ Output bus.
This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.
Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is
strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hard-
ware protection against program and erase operations.
The devices feature an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER)
Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to
be connected to a single pull-up resistor.
A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation
fails, the data can be programmed in another page without having to resend the data to be programmed.
The devices are available in the following packages:
-
48-TSOP1
(12 x 20 x 1.2 mm)
- 48-WSOP1
(12 x 17 x 0.7 mm)
- 63-FBGA
(8.5 x 15 x 1.2 mm, 6 x 8 ball array, 0.8mm pitch)
Three options are available for the NAND Flash family:
- Automatic Page 0 Read after Power-up, which allows the microcontroller to directly download the boot code from
page 0.
- Chip Enable Dont Care, which allows code to be directly downloaded by a microcontroller, as Chip Enable transitions
during the latency time do not stop the read operation.
- A Serial Number, which allows each device to be uniquely identified. The Serial Number options is subject to an NDA
(Non Disclosure Agreement) and so not described in the datasheet. For more details of this option contact your near-
est HYNIX Sales office.
Devices are shipped from the factory with Block 0 always valid and the memory content bits, in valid blocks, erased to
'1'.
相關(guān)PDF資料
PDF描述
HY27US08121M 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27USxxx 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US16121M 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY29F002TC-70 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TC-45 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27SS16561A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27SS16561M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27SS561M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27SSXXX 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27UA081G1M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*
主站蜘蛛池模板： 滕州市| 称多县| 肃北| 新巴尔虎右旗| 济源市| 三门县| 厦门市| 安远县| 云霄县| 安图县| 许昌市| 江山市| 巧家县| 衡阳县| 葫芦岛市| 稻城县| 高邮市| 什邡市| 嘉义县| 鄂伦春自治旗| 丘北县| 夏河县| 吴川市| 且末县| 大洼县| 大余县| 沂水县| 新兴县| 梧州市| 遂平县| 昆山市| 张家川| 太白县| 绵阳市| 阜新市| 收藏| 揭西县| 砀山县| 旬阳县| 邓州市| 富宁县|