- 您現在的位置：買賣IC網 > PDF目錄385414 > HY27US08121M (Hynix Semiconductor Inc.) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash PDF資料下載
參數資料
| 型號： | HY27US08121M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| 中文描述： | 512兆（64Mx8bit / 32Mx16bit）NAND閃存 |
| 文件頁數： | 29/43頁 |
| 文件大小： | 729K |
| 代理商： | HY27US08121M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁
Rev 0.6 / Oct. 2004
29
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 15: AC Characteristics for Operation (3.3V Device and 1.8V Device)
Alt.
Sym-
bol
Sym-
bol
Parameter
3.3V
Device
1.8V
Device
Unit
t
ALLRL1
t
AR1
Address Latch Low to Read Enable
Low
Read Electronic Signature
Min
10
25
ns
t
ALLRL2
t
AR2
Read cycle
Min
50
80
ns
t
BHRL
t
RR
Ready/Busy High to Read Enable Low
Min
20
ns
t
BLBH1
t
R
Ready/Busy Low to Ready/Busy High
Read Busy time, 512Mb, 1Gb
4)
Max
12
15
us
t
BLBH2
t
PROG
Program Busy time
Max
500
us
t
BLBH3
t
BERS
Erase Busy time
Max
3
ms
t
BLBH4
t
RST
Reset Busy time, during ready
Max
5
us
Reset Busy time, during read
Max
5
us
Reset Busy time, during program
Max
10
us
Reset Busy time, during erase
Max
500
us
t
CLLRL
t
CLR
Command Latch Low to Read Enable Low
Min
10
ns
t
DZRL
t
IR
Data Hi-Z to Read Enable Low
Min
0
ns
t
EHBH
t
CRY
Chip Enable High to Ready/Busy High (CE intercepted read)
Max
70+tr
(1)
ns
t
EHEL
t
CEH
Chip Enable High to Chip Enable Low
(2)
Min
100
ns
t
EHQZ
t
CHZ
Chip Enable High to Output Hi-Z
Max
20
ns
t
ELQV
t
CEA
Chip Enable Low to Output Valid
Max
45
75
ns
t
RHBL
t
RB
Read Enable High to Ready/Busy Low
Max
100
ns
t
RHRL
t
REH
Read Enable High to Read Enable
Low
Read Enable High Hold time
Min
15
20
ns
t
RHQZ
t
RHZ
Read Enable High to Output Hi-Z
Min
15
ns
Max
30
t
RLRH
t
RP
Read Enable Low to Read Enable
High
Read Enable Pulse Width
Min
30
60
ns
t
RLRL
t
RC
Read Enable Low to Read Enable Low
Read Cycle time
Min
50
80
ns
t
RLQV
t
REA
Read Enable Low to Output Valid
Read Enable Access time
Max
35
60
ns
t
READID
Read ES Access time
45
t
WHBH
t
R
Write Enable High to Ready/Busy High
Max
12
15
us
t
WHBL
t
WB
Write Enable High to Ready/Busy Low
Max
100
ns
相關PDF資料 |
PDF描述 |
|---|---|
| HY27USxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US16121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY29F002TC-70 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TC-45 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TC-55 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY27US08122B | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US081G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27US08281A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08282A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08561A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
發布緊急采購，3分鐘左右您將得到回復。