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參數(shù)資料
| 型號(hào)： | HY27US16561M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| 中文描述： | 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存 |
| 文件頁數(shù)： | 13/44頁 |
| 文件大?。?/td> | 733K |
| 代理商： | HY27US16561M |
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Rev 0.7 / Oct. 2004
13
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been
executed in Area B the pointer returns automatically to Area A.
The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h)
can be issued before the program command 80h is issued (see Figure 9).
Figure 8. Pointer Operation
Figure 9. Pointer Operations for Programming
Area A
(00h)
Area B
(01h)
Area C
(50h)
Bytes 0-255
Bytes 256-511
Bytes
512-527
A
B
C
Pointer
(00h, 01h, 50h)
x8 Devices
Page Buffer
Area C
(50h)
Words
256-263
C
x16 Devices
Page Buffer
Area A
(00h)
Words 0-255
A
Pointer
(00h, 50h)
10h
80h
01h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
01h
Data
Input
AREA B
AREA B, C can be programmed depending on how much data is input.
The 01h command must be re-issued before each program.
10h
80h
00h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
00h
Data
Input
AREA A
AREA A, B, C can be programmed depending on how much data is input.
Subsequent 00h commands can be omitted.
10h
80h
50h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
50h
Data
Input
AREA C
Only Areas C can be programmed.
Subsequent 50h commands can be omitted.
I/O
I/O
I/O
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27US561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SS16561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SSxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27US561M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27USXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY29DL162 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M(X8/X16)|3.0V DUAL BANK|70|NOR FLASH - 16M |
| HY29DL162BF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
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