- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385414 > HY27US16561M (Hynix Semiconductor Inc.) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash PDF資料下載
參數(shù)資料
| 型號(hào)： | HY27US16561M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| 中文描述： | 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存 |
| 文件頁數(shù)： | 8/44頁 |
| 文件大小： | 733K |
| 代理商： | HY27US16561M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁當(dāng)前第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁
Rev 0.7 / Oct. 2004
8
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram and Table 1, Signal Names, for a brief overview of the signals connected to this device.
Inputs/Outputs (I/O
0
-I/O
7
)
Input/Outputs 0 to 7 are used to input the selected address, output the data during a Read opertion or input a com-
mand or data during a Write operation. The inputs are latched on the rising edge of Write Enable. I/O
0
-I/O
7
can be left
floating when the device is deselected or the outputs are disabled.
Inputs/Outputs (I/O
8
-I/O
15
)
Input/Outputs 8 to 15 are only available in x16 devices. They are used to output the data during a Read operation or
input data during a Write operation. Command and Address Inputs only require I/O
0
to I/O
7
.
The inputs are latched on the rising edge of Write Enable. I/O
8
-I/O
15
can be left floating when the device is deselected
or the outputs are disabled.
Address Latch Enable (ALE)
The Address Latch Enable activates the latching of the Address inputs in the Command Interface. When ALE is high,
the inputs are latched on the rising edge of Write Enable.
Command Latch Enable (CLE)
The Command Latch Enable activates the latching of the Command inputs in the Command Interface. When CLE is
high, the inputs are latched on the rising edge of Write Enable.
Chip Enable (CE)
The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip En-
able is low, V
IL
, the device is selected. If Chip Enable goes high, V
IH
, while the device is busy, the device remains se-
lected and does not go into standby mode.
When the device is executing a Sequential Row Read operation, Chip Enable must be held low (from the second page
read onwards) during the time that the device is busy (t
BLBH1
). If Chip Enable goes high during t
BLBH1
the operation is
aborted.
Read Enable (RE)
The Read Enable, RE, controls the sequential data output during Read operations. Data is valid t
RLQV
after the falling
edge of RE. The falling edge of RE also increments the internal column address counter by one.
Write Enable (WE)
The Write Enable input, WE, controls writing to the Command Interface, Input Address and Data latches. Both
addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 1us (min) is required before the Command Interface is ready to
accept a command. It is recommended to keep Write Enable high during the recovery time.
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program or erase operations.
When Write Protect is Low, V
IL
, the device does not accept any program or erase operations.
It is recommended to keep the Write Protect pin Low, V
IL
, during power-up and power-down.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27US561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SS16561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SSxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27US561M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27USXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY29DL162 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M(X8/X16)|3.0V DUAL BANK|70|NOR FLASH - 16M |
| HY29DL162BF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。