- 您現在的位置：買賣IC網 > PDF目錄385414 > HY29F002TT-70 (HYNIX SEMICONDUCTOR INC) 2 Megabit (256K x 8), 5 Volt-only, Flash Memory PDF資料下載
參數資料
| 型號： | HY29F002TT-70 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數： | 12/38頁 |
| 文件大小： | 381K |
| 代理商： | HY29F002TT-70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
12
Rev. 4.1/May 01
HY29F002T
START
Issue PROGRAM
Command Sequence:
Last cycle contains
program Address/Data
Check Programming Status
(See Write Operation Status
Section)
Last Word/Byte
Done
YES
NO
PROGRAMMING
COMPLETE
GO TO
ERROR RECOVERY
DQ[5] Error Exit
Normal Exit
Figure 4. Programming Procedure
START
Issue CHIP ERASE
Command Sequence
Check Erase Status
(See Write Operation Status
Section)
CHIP ERASE COMPLETE
GO TO
ERROR RECOVERY
DQ[5] Error Exit
Normal Exit
this state, and a succeeding read will show that
the data is still
“
0
”
.
Figure 4 illustrates the procedure for the Program
operation.
Chip Erase Command
The Chip Erase command sequence consists of
two unlock cycles, followed by the erase command,
two additional unlock cycles and then the chip erase
data cycle. During chip erase, all sectors of the
device are erased except protected sectors. The
command sequence starts the Automatic Erase al-
gorithm, which preprograms and verifies the entire
memory, except for protected sectors, for an all zero
data pattern prior to electrical erase. The device
then provides the required number of internally
generated erase pulses and verifies cell erasure
within the proper cell margins. The host system is
not required to provide any controls or timings dur-
ing these operations.
Commands written to the device during execution
of the Automatic Erase algorithm are ignored. Note
that a hardware reset immediately terminates the
erase operation. To ensure data integrity, the
aborted chip erase command sequence should be
reissued once the reset operation is complete.
When the Automatic Erase algorithm is finished,
the device returns to the Read mode. Several
methods are provided to allow the host to deter-
mine the status of the erase operation, as de-
scribed in the Write Operation Status section.
Figure 5 illustrates the Chip Erase procedure.
Sector Erase Command
The Sector Erase command sequence consists
of two unlock cycles, followed by the erase com-
mand, two additional unlock cycles and then the
sector erase data cycle, which specifies which
sector is to be erased. As described later in this
section, multiple sectors can be specified for era-
sure with a single command sequence. During
sector erase, all specified sectors are erased se-
quentially. The data in sectors not specified for
erasure, as well as the data in any protected sec-
tors specified for erasure, is not affected by the
sector erase operation.
The Sector Erase command sequence starts the
Automatic Erase algorithm, which preprograms
and verifies the specified unprotected sectors for
an all zero data pattern prior to electrical erase.
The device then provides the required number of
internally generated erase pulses and verifies cell
erasure within the proper cell margins. The host
system is not required to provide any controls or
timings during these operations.
After the sector erase data cycle (the sixth bus
cycle) of the command sequence is issued, a sec-
tor erase time-out of 50 μs (minimum), measured
from the rising edge of the final WE# pulse in that
bus cycle, begins. During this time, an additional
sector erase data cycle, specifying the sector ad-
dress of another sector to be erased, may be writ-
ten into an internal sector erase buffer. This buffer
Figure 5. Chip Erase Procedure
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F002TT-90 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F040A | 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F080T70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F002TT-70E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TT-70I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TT-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
| HY29F002TT-90E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F002TT-90I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
發布緊急采購，3分鐘左右您將得到回復。