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參數(shù)資料

型號(hào)：	HY29F002TT-70
廠商：	HYNIX SEMICONDUCTOR INC
元件分類：	DRAM
英文描述：	2 Megabit (256K x 8), 5 Volt-only, Flash Memory
中文描述：	256K X 8 FLASH 5V PROM, 70 ns, PDSO32
封裝：	TSOP-32
文件頁數(shù)：	18/38頁
文件大小：	381K
代理商：	HY29F002TT-70

Rev. 4.1/May 01

HY29F002T

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#,

CE# or WE# do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by asserting any one of

the following conditions: OE# = V

, CE# = V

, or

WE# = V

. To initiate a write cycle, CE# and WE#

must be a logical zero while OE# is a logical one.

Power-Up Write Inhibit

If WE# = CE# = V

and OE# = V

during power

up, the device does not accept commands on the

rising edge of WE#. The internal state machine is

automatically reset to the Read mode on power-

up.

Sector Protection

Additional data protection is provided by the

HY29F002T

’

s sector protect feature, described

previously, which can be used to protect sensitive

areas of the Flash array from accidental or unau-

thorized attempts to alter the data.

相關(guān)PDF資料	PDF描述
HY29F002TT-90	2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F040A	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F080T70	8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080	8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080G12	8 Megabit (1M x 8), 5 Volt-only, Flash Memory

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
HY29F002TT-70E	制造商:未知廠家制造商全稱:未知廠家功能描述:x8 Flash EEPROM
HY29F002TT-70I	制造商:未知廠家制造商全稱:未知廠家功能描述:x8 Flash EEPROM
HY29F002TT-90	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-90E	制造商:未知廠家制造商全稱:未知廠家功能描述:x8 Flash EEPROM
HY29F002TT-90I	制造商:未知廠家制造商全稱:未知廠家功能描述:x8 Flash EEPROM

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