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參數資料
| 型號： | IRF1530N |
| 文件頁數： | 1/11頁 |
| 文件大小： | 661K |
| 代理商： | IRF1530N |
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
S
D
G
V
DSS
= 30V
R
DS(on)
= 3.3m
I
D
= 75A
Description
www.irf.com
1
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
Benefits
Typical Applications
14V Automotive Electrical Systems
14V Electronic Power Steering
●
●
IRF1503S
IRF1503L
D
2
Pak
IRF1503S
TO-262
IRF1503L
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
190
130
75
960
200
1.3
± 20
510
980
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
°C
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
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| IRF153R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AVALANCHE ENERGY RATED N-CHANNEL POWER MOSFETS |
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| IRF1607 | 功能描述:MOSFET N-CH 75V 142A TO-220AB RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF1607HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 142A 3-Pin(3+Tab) TO-220AB |
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