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參數(shù)資料
| 型號： | IRF840F |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k) |
| 中文描述： | ? -通道增強(qiáng)型功率MOS晶體管（188.09十一） |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 129K |
| 代理商： | IRF840F |
IRF840AS/L
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Fig 14.
For N-Channel HEXFET
Power MOSFETs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF840LC | |
| IRF841F | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k) |
| IRF842FI | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB |
| IRF843FI | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-220AB |
| IRF840 | PowerMOS transistor Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF840FI | 制造商:STMicroelectronics 功能描述:MOSFET Transistor, N-Channel, TO-220VAR |
| IRF840FP | 制造商:SUNTAC 制造商全稱:SUNTAC 功能描述:POWER MOSFET |
| IRF840I | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| IRF840L | 功能描述:MOSFET N-Chan 500V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF840LC | 功能描述:MOSFET N-Chan 500V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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