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參數資料
| 型號： | IRFR430A |
| 英文描述： | 500V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
| 中文描述： | 500V單N溝道HEXFET功率MOSFET的在D - Pak封裝 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 111K |
| 代理商： | IRFR430A |
IRFR430A/IRFU430A
2
www.irf.com
Parameter
Min. Typ. Max. Units
2.3
–––
–––
–––
24 I
D
= 5.0A
–––
–––
6.5
–––
–––
13
–––
8.7
–––
–––
27
–––
–––
17
–––
–––
16
–––
–––
490
–––
–––
75
–––
–––
4.5
–––
–––
750
–––
–––
25
–––
–––
51
–––
Conditions
V
DS
= 50V, I
D
= 3.0A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 5.0A
R
G
= 15
R
D
= 50
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 5.0A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 5.0A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
410
1.4
1.5
620
2.1
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
5.0
20
A
Static @ T
J
= 25
°
C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.60
–––
V/
°
C Reference to 25
°
C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
500
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
–––
–––
–––
–––
–––
1.7
4.5
25
250
100
-100
V
V
GS
= 10V, I
D
= 3.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
2.0
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
5.0A, di/dt
≤
320A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C.
Notes:
Starting T
J
= 25
°
C, L = 11mH
R
G
= 25
, I
AS
= 5.0A. (See Figure 12)
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR430APBF | 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR430ATR | 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR430ATRL | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) DPAK T/R 制造商:Vishay Semiconductors 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN DPAK - Tape and Reel |
| IRFR430ATRLPBF | 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR430ATRPBF | 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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