欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: IS42LS81600A-7T
英文描述: RES 23.2K-OHM 1% 0.125W 25PPM THIN-FILM SMD-0805 5K/REEL-7IN-PA
中文描述: 16Meg × 8,8Meg x16
文件頁數(shù): 1/66頁
文件大小: 556K
代理商: IS42LS81600A-7T
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION, Rev. 00A
08/01/02
1
Copyright 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS42S81600A, IS42LS81600A
IS42S16800A, IS42LS16800A
IS42S32400A, IS42LS32400A
ISSI
FEATURES
Clock frequency: 133 100, MHz
Fully synchronous; all signals referenced to a
positive clock edge
Internal bank for hiding row access/precharge
Power supply
V
DD
IS42LS81600A
2.5V
IS42LS16800A
2.5V
IS42LS32400A
2.5V
IS42S81600A
3.3V
IS42S16800A
3.3V
IS42S32400A
3.3V
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Extended Mode Register
Programmable Power Reduction Feature by
partial array activation during Self-Refresh
Auto Refresh (CBR)
Temp. Compensated Self Refresh.
Self Refresh with programmable refresh periods
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Industrial Temperature Availability
V
DDQ
1.8V (2.5V tolerant)
1.8V (2.5V tolerant)
1.8V (2.5V tolerant)
3.3V
3.3V
3.3V
OVERVIEW
ISSI
's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock
input.The 128Mb SDARM is organized as follows.
16Meg x 8, 8Meg x16 & 4Meg x 32
128-MBIT SYNCHRONOUS DRAM
ADVANCED INFORMATION
AUGUST 2002
KEY TIMING PARAMETERS
Parameter
-7
-10
Unit
Clk Cycle Time
CAS
Latency = 3
CAS
Latency = 2
7
10
10
10
ns
ns
Clk Frequency
CAS
Latency = 3
CAS
Latency = 2
133
100
100
100
Mhz
Mhz
Access Time from Clock
CAS
Latency = 3
CAS
Latency = 2
5.4
6
7
9
ns
ns
Row to Column Delay Time (t
RCD
)
15
18
ns
Row Precharge Tim (t
RP
)
15
18
ns
IS42LS81600A
IS42S81600A
4M x8x4 Banks
IS42LS16800A
IS42S16800A
2M x16x4 Banks
IS42LS32400A
IS42S32400A
2M x16x4 Banks
54pin TSOPII
54ball FBGA
90ball FBGA
54 pin TSOPII
86pin TSOPII
相關(guān)PDF資料
PDF描述
IS42LS81600A-7TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7B 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7BI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42LS81600A-7TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42R16100E-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42R16320D-7BL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42R16320D-7BLI 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 512M-Bit 32Mx16 2.5V 54-Pin TFBGA
IS42RM16160D-7BL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 143MHz Mobile S動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器, 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
主站蜘蛛池模板: 西乌珠穆沁旗| 同仁县| 平定县| 樟树市| 贵州省| 连山| 九龙县| 宜黄县| 利川市| 奉贤区| 固镇县| 陇川县| 永兴县| 黄骅市| 泸西县| 新沂市| 镇康县| 苍南县| 色达县| 阿巴嘎旗| 贵港市| 广汉市| 乐东| 彰化市| 房山区| 漳浦县| 定南县| 岳阳市| 资兴市| 桐城市| 富川| 若羌县| 仁寿县| 太康县| 天柱县| 苏州市| 峨边| 九寨沟县| 方正县| 金阳县| 绩溪县|