- 您現在的位置：買賣IC網 > PDF目錄360984 > IS42LS81600A-7T RES 23.2K-OHM 1% 0.125W 25PPM THIN-FILM SMD-0805 5K/REEL-7IN-PA PDF資料下載
參數資料
| 型號： | IS42LS81600A-7T |
| 英文描述： | RES 23.2K-OHM 1% 0.125W 25PPM THIN-FILM SMD-0805 5K/REEL-7IN-PA |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數： | 55/66頁 |
| 文件大?。?/td> | 556K |
| 代理商： | IS42LS81600A-7T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁當前第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
55
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
a
D
OUT
a+1
D
OUT
b
D
OUT
b+1
COL a
BCOL b
CAS Latency - 3 (BANK n)
CAS Latency - 3 (BANK m)
t
RP - BANK n
t
RP - BANK m
RBANK n
BANK m
Page Active
READ with Burst of 4
Interrupt Burst, Precharge
Idle
Page Active
READ with Burst of 4
Precharge
Internal States
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQM
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
a
D
IN
b
D
IN
b+1
D
IN
b+2
D
IN
b+3
COL a
BCOL b
CAS Latency - 3 (BANK n)
t
RP - BANK n
t
RP - BANK m
WRITE - AP
BANK n
WRITE - AP
BANK m
READ with Burst of 4
Interrupt Burst, Precharge
Idle
Page Active
WRITE with Burst of 4
Write-Back
Internal States
Page Active
BURST READ/SINGLE WRITE
The burst read/single write mode is entered by programming
the write burst mode bit
(M9)
in the mode register to a logic 1.
In this mode, all
WRITE
commands result in the access of a
single column location (burst of one), regardless of the
programmed burst length. READ commands access
columns according to the programmed burst length and
sequence, just as in the normal mode of operation (M9 = 0).
CONCURRENT AUTO PRECHARGE
An access command (READ or WRITE) to another bank
while an access command with auto precharge enabled is
executing is not allowed by SDRAMs, unless the SDRAM
supports CONCURRENT AUTO PRECHARGE.
ISSI
SDRAMs support CONCURRENT AUTO PRECHARGE.
Four cases where CONCURRENT AUTO PRECHARGE
occurs are defined below.
READ with Auto Precharge
1. Interrupted by a READ (with or without auto precharge):
A READ to bank m will interrupt a READ on bank n, CAS
latency later. The PRECHARGE to bank n will begin
when the READ to bank m is registered.
2. Interrupted by a WRITE (with or without auto precharge):
A WRITE to bank m will interrupt a READ on bank n when
registered. DQM should be used two clocks prior to the
WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to
bank m is registered.
READ With Auto Precharge interrupted by a READ
READ With Auto Precharge interrupted by a WRITE
相關PDF資料 |
PDF描述 |
|---|---|
| IS42LS81600A-7TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7B | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS42LS81600A-7TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42R16100E-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42R16320D-7BL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42R16320D-7BLI | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 512M-Bit 32Mx16 2.5V 54-Pin TFBGA |
| IS42RM16160D-7BL | 功能描述:動態隨機存取存儲器 256M (16Mx16) 143MHz Mobile S動態隨機存取存儲器, 2.5v RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。