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參數資料
型號: IS42LS81600A-7T
英文描述: RES 23.2K-OHM 1% 0.125W 25PPM THIN-FILM SMD-0805 5K/REEL-7IN-PA
中文描述: 16Meg × 8,8Meg x16
文件頁數: 51/66頁
文件大小: 556K
代理商: IS42LS81600A-7T
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
51
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DON'T CARE
CLK
CKE
COMMAND
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
NOP
WRITE
NOP
NOP
BANK a,
COL n
D
IN
n
D
IN
n+1
D
IN
n+2
INTERNAL
CLOCK
DON'T CARE
CLK
CKE
COMMAND
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
BANK a,
COL n
Qn
Qn+1
Qn+2
Qn+3
INTERNAL
CLOCK
CLOCK SUSPEND
Clock suspend mode occurs when a column access/burst
is in progress and CKE is registered LOW. In the clock
suspend mode, the internal clock is deactivated, “freezing”
the synchronous logic.
For each positive clock edge on which CKE is sampled
LOW, the next internal positive clock edge is suspended.
Any command or data present on the input pins at the time
of a suspended internal clock edge is ignored; any data
present on the DQ pins remains driven; and burst counters
are not incremented, as long as the clock is suspended.
(See following examples.)
Clock suspend mode is exited by registering CKE HIGH; the
internal clock and related operation will resume on the
subsequent positive clock edge.
Clock Suspend During WRITE Burst
Clock Suspend During READ Burst
相關PDF資料
PDF描述
IS42LS81600A-7TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7B 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7BI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關代理商/技術參數
參數描述
IS42LS81600A-7TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42R16100E-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42R16320D-7BL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42R16320D-7BLI 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 512M-Bit 32Mx16 2.5V 54-Pin TFBGA
IS42RM16160D-7BL 功能描述:動態隨機存取存儲器 256M (16Mx16) 143MHz Mobile S動態隨機存取存儲器, 2.5v RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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