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參數資料
| 型號： | MBT35200 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 繼電器，輸入/輸出模塊 |
| 英文描述： | 30 AMP MINIATURE POWER RELAY |
| 中文描述： | 高電流表面貼裝進步黨硅晶體管的負荷開關在便攜式應用管理 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 81K |
| 代理商： | MBT35200 |
MBT35200MT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mAdc, I
B
= 0)
V
(BR)CEO
–35
–45
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= –0.1 mAdc, I
E
= 0)
V
(BR)CBO
–55
–65
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= –0.1 mAdc, I
C
= 0)
V
(BR)EBO
–5.0
–7.0
—
Vdc
Collector Cutoff Current
(V
CB
= –35 Vdc, I
E
= 0)
I
CBO
—
–0.03
–0.1
Adc
Collector–Emitter Cutoff Current
(V
CES
= –35 Vdc)
I
CES
—
–0.03
–0.1
Adc
Emitter Cutoff Current
(V
EB
= –4.0 Vdc)
I
EBO
—
–0.01
–0.1
Adc
ON CHARACTERISTICS
DC Current Gain
(1)
(I
C
= –1.0 A, V
CE
= –1.5 V)
(I
C
= –1.5 A, V
CE
= –1.5 V)
(I
C
= –2.0 A, V
CE
= –3.0 V)
h
FE
100
100
100
200
200
200
—
400
—
Collector–Emitter Saturation Voltage (Note 4.)
(I
C
= –0.8 A, I
B
= –0.008 A)
(I
C
= –1.2 A, I
B
= –0.012 A)
(I
C
= –2.0 A, I
B
= –0.02 A)
V
CE(sat)
—
—
—
–0.125
–0.175
–0.260
–0.15
–0.20
–0.31
V
Base–Emitter Saturation Voltage (Note 4.)
(I
C
= –1.2 A, I
B
= –0.012 A)
V
BE(sat)
—
–0.68
–0.85
V
Base–Emitter Turn–on Voltage (Note 4.)
(I
C
= –2.0 A, V
CE
= –3.0 V)
V
BE(on)
—
–0.81
–0.875
V
Cutoff Frequency
(I
C
= –100 mA, V
CE
= –5.0 V, f = 100 MHz)
f
T
100
—
—
MHz
Input Capacitance (V
EB
= –0.5 V, f = 1.0 MHz)
Cibo
—
600
650
pF
Output Capacitance (V
CB
= –3.0 V, f = 1.0 MHz)
Cobo
—
85
100
pF
Turn–on Time (V
CC
= –10 V, I
B1
= –100 mA, I
C
= –1 A, R
L
= 3 )
t
on
—
35
—
nS
Turn–off Time (V
CC
= –10 V, I
B1
= I
B2
= –100 mA, I
C
= 1 A, R
L
= 3 )
4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle
≤
2%
t
off
—
225
—
nS
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