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參數資料
型號: MBT35200
廠商: ON SEMICONDUCTOR
元件分類: 繼電器,輸入/輸出模塊
英文描述: 30 AMP MINIATURE POWER RELAY
中文描述: 高電流表面貼裝進步黨硅晶體管的負荷開關在便攜式應用管理
文件頁數: 8/8頁
文件大小: 81K
代理商: MBT35200
MBT35200MT1
http://onsemi.com
8
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MBT35200MT1/D
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相關代理商/技術參數
參數描述
MBT35200MT1 功能描述:兩極晶體管 - BJT Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MBT35200MT1_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
MBT35200MT1G 功能描述:兩極晶體管 - BJT Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MBT35200MT1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MBT35200MT2G 功能描述:兩極晶體管 - BJT TSOP6 PNP XSTR SPCL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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