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參數資料
型號: MJW1302A
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary NPN-PNP Silicon Power Bipolar Transistors
中文描述: 15 A, 230 V, PNP, Si, POWER TRANSISTOR, TO-247AD
封裝: CASE 340L-02, TO-247, 3 PIN
文件頁數: 2/8頁
文件大小: 91K
代理商: MJW1302A
MJW3281A (NPN) MJW1302A (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
230
Vdc
Collector Cutoff Current
(VCB = 230 Vdc, IE = 0)
ICBO
50
μ
Adc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
5
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
4
1
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
hFE
50
50
50
50
50
45
12
125
115
35
200
200
200
200
200
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
0.4
2
Vdc
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
2
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
30
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
600
pF
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f
T
PNP MJW1302A
f
T
NPN MJW3281A
IC, COLLECTOR CURRENT (AMPS)
0.1
1.0
10
50
40
30
20
10
0
60
40
30
0
10
0.1
1.0
10
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
20
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
50
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