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參數資料
| 型號： | MJW1302A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR, TO-247AD |
| 封裝： | CASE 340L-02, TO-247, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 91K |
| 代理商： | MJW1302A |
MJW3281A (NPN) MJW1302A (PNP)
http://onsemi.com
3
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
hF
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
hF
hF
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I
PNP MJW1302A
NPN MJW3281A
hF
TYPICAL CHARACTERISTICS
PNP MJW1302A
PNP MJW1302A
NPN MJW3281A
NPN MJW3281A
45
25
20
15
10
5.0
0
5.0
0
10
15
20
25
45
25
20
15
10
0
5.0
0
10
15
20
25
5.0
1.5 A
1 A
0.5 A
IB = 2 A
TJ = 25
°
C
30
40
35
1.5 A
1 A
0.5 A
IB = 2 A
TJ = 25
°
C
40
35
30
1000
100
10
10
1.0
0.1
TJ = 100
°
C
25
°
C
-25
°
C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
TJ = 100
°
C
25
°
C
-25
°
C
VCE = 20 V
100
1000
100
10
100
10
1.0
0.1
TJ = 100
°
C
25
°
C
-25
°
C
VCE = 5 V
1000
100
10
100
10
1.0
0.1
TJ = 100
°
C
25
°
C
-25
°
C
VCE = 5 V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJW1302AG | 功能描述:兩極晶體管 - BJT 15A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW16010 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16010A | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJW16012 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16018 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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