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參數(shù)資料
| 型號： | MJW1302A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR, TO-247AD |
| 封裝： | CASE 340L-02, TO-247, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 91K |
| 代理商： | MJW1302A |
MJW3281A (NPN) MJW1302A (PNP)
http://onsemi.com
4
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
PNP MJW1302A
NPN MJW3281A
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0
100
10
1.0
0.1
0.5
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
10
1.0
0.1
100
10
1.0
0.1
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
10
1.0
0.1
100
10
1.0
0.1
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR EMITTER (VOLTS)
Figure 14. Active Region Safe Operating Area
PNP MJW1302A
NPN MJW3281A
100
1.0
0.1
1000
10
1.0
100
10
I
VCE, COLLECTOR EMITTER (VOLTS)
100
1.0
0.1
1000
10
1.0
100
10
I
100 mSec
10 mSec
1 Sec
100 mSec
10 mSec
1 Sec
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJW1302AG | 功能描述:兩極晶體管 - BJT 15A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW16010 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16010A | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJW16012 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16018 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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