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參數資料
| 型號： | MJW1302A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR, TO-247AD |
| 封裝： | CASE 340L-02, TO-247, 3 PIN |
| 文件頁數： | 5/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MJW1302A |
MJW3281A (NPN) MJW1302A (PNP)
http://onsemi.com
5
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 13 and 14 is based on TJ(pk) = 150
°
C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
Figure 15. MJW1302A Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C
Figure 16. MJW3281A Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C
10000
1000
100
100
10
1.0
0.1
10000
1000
100
100
10
1.0
0.1
TJ = 25
°
C
ftest = 1 MHz
Cib
Cob
TJ = 25
°
C
ftest = 1 MHz
Cib
Cob
PNP MJW1302A
NPN MJW3281A
TYPICAL CHARACTERISTICS
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJW1302AG | 功能描述:兩極晶體管 - BJT 15A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW16010 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16010A | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJW16012 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16018 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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