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參數(shù)資料
| 型號： | MMBF0201N |
| 廠商： | Motorola, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOSFET的任務(wù)操作系統(tǒng) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 178K |
| 代理商： | MMBF0201N |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
ID
IDM
20
Vdc
Gate–to–Source Voltage — Continuous
±
20
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Pulsed Drain Current (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C(1)
Operating and Storage Temperature Range
300
240
750
mAdc
PD
225
mW
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
625
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF0201NLT1
7
″
12 mm embossed tape
3000
MMBF0201NLT3
13
″
12 mm embossed tape
10,000
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF0201N/D
SEMICONDUCTOR TECHNICAL DATA
CASE 318–07, Style 21
SOT–23 (TO–236AB)
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
Motorola Preferred Device
1
2
3
3 DRAIN
1
GATE
2 SOURCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBF0201 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MMBF2201NT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MMBF2201PT1 | LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| MMBF2202PT1 | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MMBF2202PT3 | LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF0201NLT1 | 功能描述:MOSFET 20V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF0201NLT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23 |
| MMBF0201NLT1G | 功能描述:MOSFET 20V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF0201NLT1G | 制造商:ON Semiconductor 功能描述:MOSFET 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 20V, 300mA SOT-23 |
| MMBF0201NLT1G-CUT TAPE | 制造商:ON 功能描述:MMBF Series N-Channel 20 V 1 Ohm 225 mW Surface Mount Power MOSFET - SOT-23 |
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