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參數資料
| 型號： | MMBF0201N |
| 廠商： | Motorola, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | N溝道增強型MOSFET的任務操作系統 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 178K |
| 代理商： | MMBF0201N |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
O
0
1
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2
3
4
6
0
0.6
0.8
1.0
Figure 1. Transfer Characteristics
ID
0
0.3
0.6
0.9
1.2
1.4
0
0.6
0.8
1.0
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
0
0.2
0.4
1
0
0.3
0.9
1.2
1.5
0
5
10
20
0
1.0
1.5
2.0
2.4
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Resistance versus
Gate–to–Source Voltage
0
10
12
14
16
–25
25
100
150
0.60
1.10
Qg, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
TEMPERATURE (
°
C)
Figure 6. Threshold Voltage Variance
Over Temperature
5
0.4
0.4
0.6
0.6
0.8
15
0
160
450
2000
0.2
125
°
C
25
°
C
–55
°
C
0.2
VGS = 5 V
VGS = 4 V
VGS = 3 V
VGS = 4.5 V
VGS = 10 V
0.5
V
2
4
6
8
3400
VDS = 16 V
ID = 300 mA
V
ID = 250
μ
A
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0
50
75
125
VGS = 10, 9, 8, 7, 6 V
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