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參數資料
型號: MRF1570FNT1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: ROHS COMPLIANT, PLASTIC, CASE 1366A-03, 8 PIN
文件頁數: 15/23頁
文件大小: 616K
代理商: MRF1570FNT1
22
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN211A: Field Effect Transistors in Theory and Practice
AN215A: RF Small-Signal Design Using Two-Port Parameters
AN721: Impedance Matching Networks Applied to RF Power Transistors
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
9
June 2008
Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance
values in the functional test table on p. 2
Replaced Case Outline 1366-04 with 1366-05, Issue E, p. 1, 16-18. Removed Drain-ID label from View
Y-Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min,
respectively.
Replaced Case Outline 1366A-02 with 1366A-03, Issue D, p. 1, 19-21. Removed Drain-ID label from View
Y-Y. Removed Surface Alignment tolerance label for cross hatched section on View Y-Y. Added Pin 9
designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. Added
dimension E3. Restored dimensions F and P designators to DIM column on Sheet 3.
Added Product Documentation and Revision History, p. 22
10
June 2009
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 22
Added Electromigration MTTF Calculator availability to Product Software, p. 22
相關PDF資料
PDF描述
MRF1570T1 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF158 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF175GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF18060BLR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF18060BLSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關代理商/技術參數
參數描述
MRF1570FT1 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF1570N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1570NT1 功能描述:射頻MOSFET電源晶體管 RF LDMOS TO272-6N FORMED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF1570NT1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1570T1 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
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