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參數資料
型號: MRF1570FNT1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: ROHS COMPLIANT, PLASTIC, CASE 1366A-03, 8 PIN
文件頁數: 19/23頁
文件大小: 616K
代理商: MRF1570FNT1
MRF1570NT1 MRF1570FNT1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS, 135 - 175 MHz
90
12
18
10
Pout, OUTPUT POWER (WATTS)
Figure 5. Gain versus Output Power
G
ps
,P
O
WER
G
AIN
(dB)
20
30
40
50
60
70
80
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
17
16
15
14
13
90
20
70
10
Pout, OUTPUT POWER (WATTS)
Figure 6. Drain Efficiency versus Output Power
,DRAIN
EFFICIENCY
(%)
η
60
50
40
30
20
30
40
50
60
70
80
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
1600
50
90
400
IDQ, BIASING CURRENT (mA)
Figure 7. Output Power versus Biasing Current
P out
,
OUTPUT
POWER
(W
A
TTS)
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
Pin = 36 dBm
80
70
60
600
800
1400
1200
1000
0
100
IDQ, BIASING CURRENT (mA)
Figure 8. Drain Efficiency versus Biasing Current
,DRAIN
EFFICIENCY
(%)
η
1600
400
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
Pin = 36 dBm
600
800
1400
1200
1000
80
60
40
20
15
0
100
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
P out
,
OUTPUT
POWER
(W
A
TTS)
135 MHz
175 MHz
155 MHz
Pin = 36 dBm
IDQ = 800 mA
80
60
40
20
14
13
12
11
15
0
100
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 10. Drain Efficiency versus Supply Voltage
,DRAIN
EFFICIENCY
(%)
η
80
60
40
20
135 MHz
175 MHz
155 MHz
Pin = 36 dBm
IDQ = 800 mA
11
12
13
14
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