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參數資料
| 型號： | MRF21045LSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400S, CASE 465F-04, 2 PIN |
| 文件頁數： | 4/11頁 |
| 文件大?。?/td> | 473K |
| 代理商： | MRF21045LSR3 |
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RF Device Data
Freescale Semiconductor
MRF21045LR3 MRF21045LSR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
On Characteristics (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
3
—
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.8
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2--carrier W--CDMA. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common--Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
13.5
15
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
21
23.5
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz
Bandwidth at f1 --10 MHz and f2 +10 MHz.)
IM3
—
--37.5
--35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz
Bandwidth at f1 --5 MHz and f2 +5 MHz.)
ACPR
—
--41
--38
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
--12
--9
dB
1. Part is internally matched both on input and output.
(continued)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21045LSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21045S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21060 | 制造商:Motorola Inc 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR |
| MRF21060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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