- 您現在的位置：買賣IC網 > PDF目錄98036 > MRF21045LSR3 (FREESCALE SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF21045LSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400S, CASE 465F-04, 2 PIN |
| 文件頁數： | 8/11頁 |
| 文件大小： | 473K |
| 代理商： | MRF21045LSR3 |
N
O
T
R
E
C
O
M
E
N
D
E
D
F
O
R
N
E
W
D
E
S
IG
N
O
T
R
E
C
O
M
E
N
D
E
D
F
O
R
N
E
W
D
E
S
IG
N
6
RF Device Data
Freescale Semiconductor
MRF21045LR3 MRF21045LSR3
TYPICAL CHARACTERISTICS
29
34
42
24
--32
--24
η
IMD
IDQ = 500 mA
Pout = 45 W (PEP)
f1 = 2135 MHz, f2 = 2145 MHz
41
--25
40
--26
39
--27
38
--28
37
--29
36
--30
35
--31
28
27
26
25
60
12.5
15.5
2
0
60
Gps
η
VDD = 28 Vdc
IDQ = 500 mA
f = 2170 MHz
15
50
14.5
40
14
30
13.5
20
13
10
50
30
10
8
6
4
2190
14
28
2090
--45
--10
IRL
Gps
η
ACPR
IM3
VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
26
--15
24
--20
22
--25
20
--30
18
--35
16
--40
2170
2150
2130
2110
60
--65
--25
3
5
45
7th Order
η
3rd Order
5th Order
--30
--35
--40
--45
--50
--55
--60
40
35
30
25
20
15
10
4
6
8
10
50
30
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
,D
R
A
IN
E
F
IC
IE
N
C
Y
(%
),
η
G
ps
,P
O
W
E
R
G
A
IN
(d
B
)
IM
3
(d
B
c)
,
A
C
P
R
(d
B
c)
f, FREQUENCY (MHz)
IN
P
U
T
R
E
T
U
R
N
LO
S
(d
B
)
,D
R
A
IN
E
F
IC
IE
N
C
Y
(%
)
η
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2--Carrier W--CDMA Broadband
Performance
IN
T
E
R
M
O
D
U
LA
T
IO
N
D
IS
T
O
R
T
IO
N
(d
B
c)
IM
D
,
Pout, OUTPUT POWER (WATTS) PEP
,D
R
A
IN
E
F
IC
IE
N
C
Y
(%
),
η
G
ps
,P
O
W
E
R
G
A
IN
(d
B
)
IM
3
(d
B
c)
,
A
C
P
R
(d
B
c)
,
IR
L,
Pout, OUTPUT POWER (WATTS)
G
ps
,
P
O
W
E
R
G
A
IN
(d
B
)
,D
R
A
IN
E
F
IC
IE
N
C
Y
(%
)
η
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
IN
T
E
R
M
O
D
U
LA
T
IO
N
D
IS
T
O
R
T
IO
N
(d
B
c)
IM
D
,
,D
R
A
IN
E
F
IC
IE
N
C
Y
(%
)
η
60
--50
--25
4
--30
--35
--40
--45
50
30
10
8
6
IDQ = 300 mA
700 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
600 mA
400 mA
500 mA
IN
T
E
R
M
O
D
U
LA
T
IO
N
D
IS
T
O
R
T
IO
N
(d
B
c)
IM
D
,
20
0
30
0.5
--55
--25
Gps
η
ACPR
IM3
Pout, OUTPUT POWER (WATTS Avg.) W--CDMA
--35
--30
--45
--40
--50
25
20
15
10
5
10
1
Figure 8. Two--Tone Intermodulation Distortion
and Drain Efficiency versus Drain Supply
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
相關PDF資料 |
PDF描述 |
|---|---|
| MRF21045R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21085SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21120R6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21045LSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21045S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21060 | 制造商:Motorola Inc 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR |
| MRF21060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
發布緊急采購，3分鐘左右您將得到回復。