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參數資料
| 型號： | MRF21120R6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數： | 5/12頁 |
| 文件大小： | 371K |
| 代理商： | MRF21120R6 |
RF Device Data
Freescale Semiconductor
MRF21120R6
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 μAdc)
V(BR)DSS
65
—
Vdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc )
IGSS
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.8
—
S
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
VGS(th)
2.5
3
3.8
Vdc
Gate Quiescent Voltage (3)
(VDS = 28 V, ID = 1000 mA)
VGS(Q)
3
3.9
5
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 V, ID = 2 A)
VDS(on)
—
0.38
0.5
Vdc
Dynamic Characteristics (1, 2)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.8
—
pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
10.5
11.4
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
30
34.5
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
-31
-28
dB
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
-12
-9
dB
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
—
11.5
—
dB
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Gps
—
11.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
η
—
34.5
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
IMD
—
-31
—
dB
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
IRL
—
-12
—
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Device measured in push-pull configuration.
(continued)
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