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參數資料
| 型號： | MRF377HR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 812K |
| 代理商： | MRF377HR5 |
MRF377HR3 MRF377HR5
RF Device Data
Freescale Semiconductor
RF Power Field-Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts,
IDQ = 2000 mA, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Drain Efficiency ≥ 21%
ACPR ≤ -58 dBc
Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts,
IDQ = 2000 mA
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Drain Efficiency ≥ 27.5%
IMD ≤ -31.3 dBc
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Device Designed for Push-Pull Operation Only
Integrated ESD Protection
Excellent Thermal Stability
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Drain Current - Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
648
3.7
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation @ TC = 25°C
Derate above 25°C
CW
235
1.38
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
RθJC
0.27
0.29
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF377H
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
470 - 860 MHz, 45 W AVG., 32 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 375G-04, STYLE 1
NI-860C3
MRF377HR3
MRF377HR5
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關代理商/技術參數 |
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| MRF377R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF3866 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF3866G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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