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參數資料
| 型號： | MRF377HR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁數： | 2/16頁 |
| 文件大小： | 812K |
| 代理商： | MRF377HR5 |
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
ηD
900
8
18
420
45
Gps
f, FREQUENCY (MHz)
Figure 14. Single-Channel ATSC 8VSB
Broadband Performance
G
ps
,POWER
GAIN
(dB)
VDD = 32 Vdc
Pout = 80 W (Avg.)
IDQ = 2000 mA
ATSC 8VSB
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
17
40
16
35
15
30
14
25
13
15
12
20
11
25
10
30
9
35
480
540
600
660
720
780
840
ACPR
100
16
19
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single-Channel ATSC 8VSB Broadband
Performance Power Gain versus Output Power
G
ps
,POWER
GAIN
(dBc)
VDD = 32 Vdc
IDQ = 2000 mA
ATSC 8VSB
470 MHz
660 MHz
560 MHz
860 MHz
760 MHz
18.5
18
17.5
17
16.5
10
100
0
40
Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single-Channel ATSC 8VSB Broadband
Performance Drain Efficiency versus Output Power
470 MHz
VDD = 32 Vdc
IDQ = 2000 mA
ATSC 8VSB
660 MHz
560 MHz
860 MHz
760 MHz
35
30
25
20
15
10
5
10
100
50
25
10
860 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 17. Single-Channel ATSC 8VSB Broadband Performance
Adjacent Channel Power Ratio versus Output Power
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
VDD = 32 Vdc
IDQ = 2000 mA
ATSC 8VSB
560 MHz
760 MHz
660 MHz
470 MHz
30
35
40
45
IMRU
4.0
100
10
0
IMRL
f, FREQUENCY (MHz)
Figure 18. ATSC 8VSB Spectrum
Reference
Point
20
30
40
50
60
70
80
90
0.8
1.6
2.4
3.2
4.0 3.2
2.4 1.6
3.25 MHz
Offset
3.25 MHz
Offset
(dB)
η
D,
DRAIN
EFFICIENCY
(%)
η
D,
DRAIN
EFFICIENCY
(%)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF377R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF3866 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF3866G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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