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參數(shù)資料
| 型號： | MRF377HR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁數(shù)： | 12/16頁 |
| 文件大小： | 812K |
| 代理商： | MRF377HR5 |
MRF377HR3 MRF377HR5
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
2200 mA
100
16
19
10
Gps
Pout, OUTPUT POWER (WATTS) PEP
Figure 2. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18.5
18
17.5
17
16.5
100
70
20
10
IDQ = 1400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation Distortion
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
VDD = 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
30
40
50
60
1600 mA
1800 mA
2000 mA
100
80
20
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
30
40
50
60
70
5th Order
3rd Order
ηD
100
5
45
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Drain Efficiency versus
Output Power
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
40
35
30
25
20
15
10
ηD
100
12
19
10
80
60
Gps
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18
40
17
20
16
0
15
20
14
40
13
60
η
D,
DRAIN
EFFICIENCY
(%)
η
D,
DRAIN
EFFICIENCY
(%)
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PDF描述 |
|---|---|
| MRF377 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377R3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377R5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF571T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MPS571T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF377R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF3866 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF3866G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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