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參數(shù)資料
型號(hào): MRF377HR5
廠商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁(yè)數(shù): 9/16頁(yè)
文件大小: 812K
代理商: MRF377HR5
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage (4)
(VGS = 0 Vdc, ID =10 μA)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current (4)
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
2.8
Vdc
On Characteristics
Gate Quiescent Voltage (3)
(VDS = 32 Vdc, ID = 2000 mAdc)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 Vdc, ID = 3 A)
VDS(on)
0.27
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
3.2
pF
Functional Tests (3) (In DVBT OFDM Single-Channel, Narrowband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
Gps
16.5
18.2
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
ηD
21
22.9
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
ACPR
-59.2
-57
dBc
Typical Performances (3) (In DVBT OFDM Single-Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
17.6
17.4
16.8
dB
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
4. Drains are tied together internally as this is a total device value.
(continued)
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