- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382391 > PHB38N02LT (NXP SEMICONDUCTORS) TrenchMOS logic level FET PDF資料下載
參數(shù)資料
| 型號： | PHB38N02LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS logic level FET |
| 中文描述： | 44.7 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 252K |
| 代理商： | PHB38N02LT |
Philips Semiconductors
PHB/PHD38N02LT
TrenchMOS logic level FET
Product data
Rev. 01 — 30 June 2003
2 of 13
9397 750 11614
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
o
C
25
°
C
≤
T
j
≤
175
o
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
20
20
12
44.7
31.6
179
57.6
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
44.7
179
A
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHB42N03LT | TrenchMOS transistor Logic level FET |
| PHB45N03LT | TrenchMOS transistor Logic level FET |
| PHB45N03LTA | N-channel enhancement mode field-effect transistor |
| PHB60N06T | TrenchMOS transistor Standard level FET |
| PHB63NQ03LT | TrenchMOS logic level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB38N02LT,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB3N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB3N4XF | 制造商:Eaton Corporation 功能描述:PISTOL HANDLE, BLACK, EXTENDED, Accessory Type:Pistol Handle, For Use With:R9 Se |
| PHB3N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB3N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
發(fā)布緊急采購，3分鐘左右您將得到回復。