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參數資料
| 型號： | PHB38N02LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS logic level FET |
| 中文描述： | 44.7 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 6/13頁 |
| 文件大小： | 252K |
| 代理商： | PHB38N02LT |
Philips Semiconductors
PHB/PHD38N02LT
TrenchMOS logic level FET
Product data
Rev. 01 — 30 June 2003
6 of 13
9397 750 11614
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03al24
0
10
20
30
0
0.2
0.4
0.6
0.8
1
VDS (V)
ID
(A)
1.8 V
Tj = 25
°
C
VGS = 1.6 V
10 V 5 V 3 V
2.4 V
2.2 V
2 V
2.6 V
03al26
0
5
10
15
20
25
0
1
2
3
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25
°
C
175
°
C
03al25
0
10
20
30
0
10
20
30
ID (A)
RDSon
(m
)
2.6 V
Tj = 25
°
C
3 V
10 V
5 V
VGS = 2.4 V
03af18
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PHB38N02LT,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB3N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB3N4XF | 制造商:Eaton Corporation 功能描述:PISTOL HANDLE, BLACK, EXTENDED, Accessory Type:Pistol Handle, For Use With:R9 Se |
| PHB3N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB3N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
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