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參數資料
| 型號： | PHB38N02LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS logic level FET |
| 中文描述： | 44.7 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 4/13頁 |
| 文件大?。?/td> | 252K |
| 代理商： | PHB38N02LT |
Philips Semiconductors
PHB/PHD38N02LT
TrenchMOS logic level FET
Product data
Rev. 01 — 30 June 2003
4 of 13
9397 750 11614
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4.
Thermal characteristics
4.1 Transient thermal impedance
Table 3:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
R
th(j-a)
thermal resistance from junction to ambient
SOT428
Thermal characteristics
Conditions
Min Typ Max Unit
-
-
2.6
K/W
SOT428 minimum footprint;
mounted on a PCB
SOT404 minimum footprint;
mounted on a PCB
SOT404 minimum footprint;
mounted on a PCB
-
75
-
K/W
-
50
-
K/W
SOT404
-
50
-
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03al22
10-2
10-1
1
10
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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相關代理商/技術參數 |
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| PHB38N02LT,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB3N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB3N4XF | 制造商:Eaton Corporation 功能描述:PISTOL HANDLE, BLACK, EXTENDED, Accessory Type:Pistol Handle, For Use With:R9 Se |
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| PHB3N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
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